Great Lakes

Great Lakes

Saturday, February 16, 2013

Triple Level Nand... Crazy

Miniaturization in storage continues as Micron announced its smallest 128Gbit NAND flash memory fabbed on a 20nm process.  The memory device uses a triple-level-cell (TLC) design which stores three bits of information per cell. This means a reduction in size of the memory footprint for the same size density as MLC memory today.  Check out the link - link

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